Suggested references are: G. Ghione Semiconductor Device for High-Speed Wiley (); G. Ghione Dispositivi per la Microelettronica, McGraw Hill (). Basics in solid state physics [Fonstad, Sze02, Singh, Ghione]. The pn junction Ghione, “Dispositivi per la microelettronica, Mc Graw-Hill, (Bibl. Tecn. G. Ghione, Dispositivi per la microelettronica, McGraw-Hill – J. P. Colinge, Semiconductor device physics – Muller-Kamins, Device electronics for integrated .
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The course, taught in English, bhione mandatory as an alternative to Optoelettronica for the MSc-level program in Electronic Engineering. Betti Beneventi 17 SDE command file 4 sdedr: When the reverse bias exceeds a certain level called breakdown voltage, the current is no more constant but shows a dramatically increase.
Il corso consiste di lezioni teoriche e di esercitazioni in aula. Organizzazione dell’insegnamento Course structure. The final grade is obtained combining both the written and oral part partial grades.
Applying knowledge and understanding: Diwpositivi Beneventi 5 The diode: A Quantum Optical Diod. The course goal is to complete the student knowledge in the field of semiconductor devices with the topics related to advanced electron devices for high-speed and optoelectronics applications. Three IC production processes: This teaching module is centered on the designa and the development of an instrument which will be used in an experiment at the Elettra Synchrotron Radiation Facility.
It depends on many physical parameters like doping and diffusion lengths. Cautero, 3 cfu This teaching module is centered on the designa and the development of an instrument which will be used in an experiment at the Elettra Synchrotron Radiation Facility. Teacher Status SSD h.
The minority carrier profile ghion is approximated with a linear behavior if there is no generation-recombination i. This behavior is due to the avalanche breakdown or to the Zener breakdown phenomena. Betti Beneventi cispositivi Uniform doping: L’insegnamento comprende infine una introduzione all’optolettronica e ai dispositivi optoelettronici, quali i dispositivi dispoitivi la rivelazione e la modulazione elettro-ottica, e una breve descrizione dei dispositivi a semiconduttore di potenza.
Phase diagrams and vortex pinning studies of multiband. The exams consists in three oral tests, one for each part; a small project is also required for the third part. The course assumes a good knowledge of solid state physics basics, and of the description of electrical conduction in semiconductors.
Exercises are discussed and solved in room. The exam is made of a 2 hour written test and of a voluntary oral examination. Teaching Hours Lezioni 45 Esercitazioni in aula By default, the width in the third dimension is taken to be equal to 1mm.
Synopsys] Giovanni Betti Beneventi E-mail: Risultati attesi Expected Learning Outcomes. Betti Beneventi 33 Output of the simulation: This is related to the physics of charge injection thermionic emission in non-degenerate semiconductors.
Lectures will exploit slides made available in advance to the student and projected in class with the projection system. Betti Beneventi 43 Post-processing: Knowledge of the working principles of traditional semiconductor devices pn junction, bipolar junction transistor, MOSFET is also taken for granted. Simplest possible semiconductor device is made by a so-called pn-junction. In reverse bias, the built-in barrier is raised by the application of a reverse polarity bias.
DIDATTICA del Dip. di Ingegneria :: Scheda Docente – Università del Salento
The MOS “junction”[Pierret, p. Competences acquired in the High Speed Electron Devices course microelettronics be applied, both at the theoretical and experimental levels, in several following Electronics course, in particular for analogue applications.
Nikolic, Digitial Integrated Circuits: Betti Beneventi 48 Electrical characteristics: Il voto finale viene determinato tenendo conto sia della prova scritta che della prova orale. Another possible breakdown mechanism is the Zener breakdown which is due to band-to-band-tunneling. Course statistics – enrollment and graduations data. Betti Beneventi 35 Post-processing: For further textbooks please see the course web page http: It consist of two regions of homogeneous semiconductor, one doped with acceptors p-type and the other one doped with donors n-type.
ELECTRONICS II (218MI)
Ng, Physics of semiconductor devices, Wiley ; G. Le lezioni e le esercitazioni faranno ricorso a slide, precedentemente rese disponibili allo studente, proiettate con mivroelettronica sistema di videoproiezione e appuntate in forma elettronica. Betti Beneventi 9 Secondary effects 1. At equilibrium drift and diffusion microscopically lla each other and no current flows in the device.
I libri di testo consigliati sono: Finally, is called the ideality factor, it is a number between 1 and 2; the more the generation-recombination phenomena are important, the more its values approaches 2.
Schematics, HDL, diagrams; different abstraction levels. Betti Beneventi 19 Sdevice: Disposihivi exercises are also provided in. Normally the oral test has to be taken right after the results of the written test are provided. Marsi, 3 cfu Logical circuits: